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| 2N4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE FEATURES * NPN epitaxial silicon, planar design * Collector-emitter voltage V CE = 40V * Collector current I C = 600mA * Complimentary (PNP) device:2N4403 * Pb free product are available :99% Sn above can meet RoHS environment substance directive request 40 Volts POWER 625 mWatts MECHANICAL DATA Case: TO-92 Terminals: Solderable per MIL-STD-202, Method 208 Approx Weight : 0.02grams Marking : 4401 2 BASE 3 COLLECTOR 1 2 3 1 EMITTER TO-92 ABSOLUTE MAXIMUM RATINGS PARAMETER C ollector - Emi tter Voltage C ollector - Base Voltage Emi tter - Base Voltage C ollector C urrent - C onti nuous Symbol V C EO V C BO V EBO IC Value 40 60 6.0 600 Uni ts V V V mA THERMAL CHARACTERISTICS PARAMETER Max Power Dissipation Storage Temperature Junction Temperature Thermal Resistance, Junction to Ambient Symbol PTOT TSTG TJ RJA Value 625 -55 to 150 -55 to 150 200 O Units mW O C C O C/W STAD-AUG.23.2005 PAGE . 1 2N4401 ELECTRICAL CHARACTERISTICS (TJ=25OC, unless otherwise noted) PA RA M E TE R C o lle c to r - E mi tte r B re a k d o wn Vo lta g e C o lle c to r - B a s e B re a k d o wn Vo lta g e E mi tte r - B a s e B re a k d o wn Vo lta g e B a s e C ut o f f C ur r e nt C o l l e c t o r C ut o f f C ur r e nt S ym b o l V (B R)C E O V (B R)C B O V (B R)E B O IB E V IC E X Te s t C o n d i t i o n IC = 1 . 0 m A , IB = 0 IC = 1 0 0 u A , IE = 0 IE = 1 0 0 u A , IC = 0 V CE=3 5 V, V EB=0 .4 V V CE=3 5 V, V EB=0 .4 V IC = 0 . 1 m A , V C E = 1 . 0 V IC = 1 . 0 m A , V C E = 1 . 0 V IC = 1 0 m A , V C E = 1 . 0 V IC = 1 5 0 m A , V C E = 1 . 0 V IC = 5 0 0 m A , V C E = 2 . 0 V IC = 1 5 0 m A , IB = 1 5 m A IC = 5 0 0 m A , IB = 5 0 m A IC = 1 5 0 m A , IB = 1 5 m A IC = 5 0 0 m A , IB = 5 0 m A IC = 2 0 0 m A , V C E = 1 0 V f=1 0 0 MHZ V C B = 5 . 0 V , IE = 0 , f = 1 M H Z V C B = 5 . 0 V , IE = 0 , f = 1 M H Z M IN . 40 60 6 .0 20 40 80 100 40 0 .7 5 250 V CC=3 0 V, V BE=2 .0 V, IC = 1 5 0 m A , IB 1 = 1 5 m A V C C = 3 0 V , IC = 1 5 0 m A IB 1 = IB 2 = 1 5 m A T YP. MA X . 100 100 300 0 .4 0 .7 5 0 .9 5 1 .2 6 .5 30 15 20 225 30 U ni t s V V V nA nA D C C ur r e nt G a i n hFE - C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e C ur r e nt - G a i n - B a nd w i d t h P r o d uc t C o l l e c t o r - B a s e C a p a c i t a nc e E m i t t e r - B a s e C a p a c i t a nc e D e l a y Ti m e R i s e Ti m e S t o r a g e Ti m e F a l l Ti m e V C E ( S AT) V B E ( S AT) fT C CBO C EBO td tr ts tf V V MHZ F F P P ns ns ns ns SWITCHING TIME EQUIVALENT TEST CIRCUITS +30V +30V +16V 0 -2V < 2ns 1.0 to 100us Duty Cycle ~ 2.0% 200 +16V 0 1.0 to 100us Duty Cycle ~ 2.0% 200 1K CS* < 10pF -14V < 20ns 1K 1N914 -4V CS* < 10pF Scope rise time < 4ns * Total shunt capacitance of test jig, connectors, and oscilloscope Fig. 1. Turn-On Time Fig. 2. Turn-Off Time STAD-AUG.23.2005 PAGE . 2 ELECTRICAL CHARACTERISTICS CURVE 350 300 250 TJ = 100 C TJ = 150 C 0.8 0.7 0.6 0.5 V BE (on) TJ = 25 C TJ = 25 C TJ = 100 C TJ = 150 C 200 hFE 150 100 50 0 0.1 1 10 100 1000 Collector Current, IC (mA) VCE = 10V 0.4 0.3 0.2 0.1 0.0 0.1 1 10 VCE = 10V 100 1000 Collector Current, IC (mA) Fig. 3. Typical hFE vs Collector Current 500 450 400 350 VCE (sat) (mV) 300 250 200 150 100 50 0 0.1 1 10 100 1000 Collector Current, IC (mA) TJ = 25 C IC/IB = 10 TJ = 150 C Fig. 4. Typical VBE vs Collector Current 1.2 1.0 0.8 V BE (sat) (V) TJ = 25 C 0.6 TJ = 150 C 0.4 0.2 0.0 0.1 1 10 100 1000 Collector Current, IC (mA) IC/IB = 10 TJ = 100 C Fig. 5. Typical VCE (sat) vs Collector Current 100 Fig. 6. Typical VBE (sat) vs Collector Current f=1 MHz Capacitance (pF) CIB (EB) 10 COB (CB) 1 0.1 1 10 100 Reverse Voltage, VR (V) Fig. 7. Typical Capacitances vs Reverse Voltage STAD-AUG.23.2005 PAGE . 3 2N4401 TO-92 Case Outline TO-92 STAD-AUG.23.2005 PAGE . 3 |
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